2N datasheet, 2N circuit, 2N data sheet: INTERFET – N-Channel Dual Silicon Junction Field-Effect Transistor,alldatasheet, datasheet, Datasheet. 2N Transistor Datasheet, 2N Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog. Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for.
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An MJ PNPwhich is also manufactured using the epitaxial process today, is a complementary transistor to the 2N It was second sourced by other manufacturers; Texas Instruments listed a single-diffused mesa version of the device in an August datasheet.
Sometimes the V CBO breakdown voltage the maximum voltage between collector and base, with the emitter open, an unrealistic arrangement in practical circuits is given as the only voltage rating, which can cause confusion. Although the original 2N went into decline relative to epitaxial-base transistors because of high manufacturing costs, the epitaxial-base version continued to be used in both linear amplifiers and switching supplies.
KD is a higher power equivalent used in Eastern Bloc countries, and is intended for general purpose applications. Modern successors to the 2N can be much more suitable in fast-switching circuits or high-end audio power amplifiers. The total power dissipation written P D in most American datasheets, P tot in European ones depends on the heatsink to which the 2N is connected.
In the sixties and early seventies, Philips produced similar devices encapsulated in TO-3 packages under the reference BDY20 described as being for “hifi” purposes and BDY38 although the BDY38 has lower voltage ratings than the 2N The 2N, 2N, and 2N devices, for example, which date back to the s but have been improved, are still useful in new designs and are still popular for experimenters.
2N3955 PDF Datasheet浏览和下载
Nevertheless, a 2N and many other power transistors originating from this era cannot be assumed to have great high-frequency performance and there can daatsheet degradation of phase-shift and open-loop gain even within the audio frequency range. It was introduced in the early s by RCA using a hometaxial power transistor process, transitioned to an epitaxial base in the mids.
It was produced exclusively by the Czechoslovakian electronics company Tesla. From Wikipedia, the free encyclopedia.
2N3955 MOSFET. Datasheet pdf. Equivalent
The 2N remains very popular as a series pass transistor in linear power supplies and is still used in for medium- current and high- power circuits generally, including low frequency power converters although its use in audio power amplifiers and DC-to-AC inverters is now less common and its use in higher frequency switch-mode applications never was very practical.
It often has a satasheet frequency of around 3.
The 2N 2m3955 a silicon NPN power transistor intended for general purpose applications. The KD have higher power and higher current than 2N The robot builder’s bonanza 2nd ed. Since the early s, the 2N transistor has been heavily targeted by counterfeiters, who substitute much smaller silicon dies with lesser power dataxheet, use inferior mounting techniques, and fake the markings. Retrieved from ” https: Other manufacturers around this time also would specify similar values e.
TRANSISTOR 2n datasheet & applicatoin notes – Datasheet Archive
With an “infinite” heatsink, that is: Also the higher frequency response has improved performance when used in audio amplifiers. In other projects Wikimedia Commons. Wikimedia Commons has media related to 2N Retrieved 31 October RCA by had changed their specification to give 2. The historically-significant 2N was designed by Herb Meisel’s engineering group with RCA; it was the first multi-amp silicon power transistor to sell for less than one dollar, and became an industry workhorse standard.
The exact performance characteristics depend on the manufacturer and date; before the move to the epitaxial base version in the mids the f T could be as low as 0. The 2N is a much lower power version of the 2N, rated at 25 W55 V and 4 Abut became almost obsolete about the late s when many TO devices were withdrawn from mainstream manufacturers’s lists.
It has a transition frequency of 2. Graf; William Sheets Build your own low-power transmitters: With changes to semiconductor manufacturing technology, the original process became economically uncompetitive in the mids, and a similar device was created using epitaxial base technology.
The device is designed to operate with an efficient heatsink, but care must be taken to mount the device properly,    else physical damage or dattasheet power handling may result, especially with cases or heatsinks that are not perfectly flat. Views Read Edit View history. The maximum collector-to-emitter voltage for the 2N, like other transistors, depends on the resistance path the external circuit provides between the base and emitter of the transistor; with ohms a 70 volt breakdown rating, V CERand the Collector-Emitter Sustaining voltage, V CEO susis given by ON Semiconductor.
This page was last edited on 22 Novemberat The art of electronics 2nd ed.